Effect of surface electronic states of p-Type GaN on the blue-light-emitting diodes

Journal of the Electrochemical Society

Volumn 152, Issue 11, 2005, Pages

  Shih, C F ^a   Chen, N C ^b   Chang, P H ^b   Liu, K S ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC POTENTIAL; LIGHT EMITTING DIODES; MAGNESIUM PRINTING PLATES; PHOTOEMISSION; REDUCTION; SURFACE CHEMISTRY; ULTRAVIOLET SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

GROWTH TEMPERATURE; SURFACE ELECTRONIC STATES; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY; X-RAY PHOTOEMISSION SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 27944467218     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2041947     Document Type: Article

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