On the impact of high-κ gate stacks on mobility: A Monte Carlo study including coupled SO phonon-plasmon scattering

Journal of Computational Electronics

Volumn 6, Issue 1-3, 2007, Pages 1-5

  Ferrari, Giulio ^a   Watling, J R ^a   Roy, S ^a   Barker, J R ^a   Asenov, A ^a   Zeitzoff, P ^b   Bersuker, G ^b  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b SEMATECH   (United States)

Author keywords

High ; Mobility; MonteCarlo simulation

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRON SCATTERING; GATE DIELECTRICS; HAFNIUM COMPOUNDS; MONTE CARLO METHODS; PERMITTIVITY; PHONON SCATTERING; PLASMONS; SILICA;

EQUIVALENT OXIDE THICKNESS; GATE STACKS; HAFNIUM SILICATE;

GATES (TRANSISTOR);

EID: 34247391408     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-006-0059-9     Document Type: Article

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