Improving the electrical properties of NILC Poly-Si films using a gettering substrate

IEEE Electron Device Letters

Volumn 28, Issue 11, 2007, Pages 1000-1003

  Hu, Chen Ming ^a   Wu, YewChung Sermon ^a   Lin, Chi Ching ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Gettering; Ni metal induced lateral crystallization (NILC); Thin film transistors (TFTs)

Indexed keywords

CRYSTALLIZATION; GETTERS; LEAKAGE CURRENTS; NICKEL; POLYSILICON; SILICON WAFERS;

METAL-INDUCED LATERAL CRYSTALLIZATION;

THIN FILM TRANSISTORS;

EID: 36148937606     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.907267     Document Type: Article

References (20)

1. M. Stewart, R. S. Howell, L. Pires, and M. K. Hatalis, "Polysilicon TFT technology for active matrix OLED displays," IEEE Trans. Electron Devices, vol. 48, no. 5, pp. 845-851, May 2001.
2. W.-K. Chen, Linear Networks and Systems. Belmont, CA: Wadsworth, 1993, pp. 123-135.
3. S. W. Lee and S. K. Joo, "Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization," IEEE Electron Device Lett., vol. 17, no. 4, pp. 160-162, Apr. 1996.
4. Z. Meng, M. Wang, and M. Wong, "High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications," IEEE Trans. Electron Devices, vol. 47, no. 2, pp. 404-409, Feb. 2000.
5. P. J. van der Zaag, M. A. Verheijen, S. Y. Yoon, and N. D. Young, "Explanation for the leakage current in polycrystalline-silicon thin-film transistors made by Ni-silicide mediated crystallization," Appl. Phys. Lett., vol. 81, no. 18, pp. 3404-3406, Oct. 2002.
6. G. A. Bhat, Z. Jin, H. S. Kwok, and M. Wong, "Effects of longitudinal grain boundaries on the performance of MILC-TFTs," IEEE Electron Device Lett., vol. 20, no. 2, pp. 97-99, Feb. 1999.
7. Z. Jin, K. Moulding, H. S. Kowk, and M. Wong, "Performance of thin-film transistors with ultrathin Ni-MILC polycrystalline silicon channel layers," IEEE Electron Device Lett., vol. 20, no. 4, pp. 167-169, Apr. 1999.
8. G. A. Bhat, H. S. Kwok, and M. Wong, "Behavior of the drain leakage current in metal-induced laterally crystallized thin film transistors," Solid State Electron., vol. 44, no. 7, pp. 1321-1324, Jul. 2000.
9. D. Murley, N. Young, M. Trainor, and D. McCulloch, "An investigation of laser annealed and metal-induced crystallized polycrystalline silicon thin-film transistors," IEEE Trans. Electron Devices, vol. 48, no. 6, pp. 1145-1151, Jun. 2001.
10. B. Mohadjeri, J. S. Williams, and J. W. Leung, "Gettering of nickel to cavities in silicon introduced by hydrogen implantation," Appl. Phys. Lett., vol. 66, no. 15, pp. 1889-1891, Apr. 1995.
11. M. Zhang, X. Zeng, P. K. Chu, R. Scholz, and C. Lin, "Nickel precipitation at nanocavities in separation by implantation of oxygen," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 18, no. 5, pp. 2249-2253, Sep. 2000.
12. R. Hoelzl, K. J. Range, L. Fabry, J. Hage, and V. Raineri, "Gettering efficiencies of polysilicon-, stacking fault- and He-implanted backsides for Cu and Ni," Mater. Sci. Eng. B, vol. 73, no. 1, pp. 95-98, Apr. 2000.
13. S. Martinuzzi, I. Perichaud, and J. J. Simon, "External gettering by aluminum-silicon alloying observed from carrier recombination at dislocations in float zone silicon wafers," Appl. Phys. Lett., vol. 70, no. 20, pp. 2744-2746, May 1997.
14. S. Martinuzzi, N. G. Henquinet, I. Périchaud, G. Mathieu, and F. Torregrossa, "Efficiency of cavity gettering in single and in multicrystalline silicon wafers," Mater. Sci. Eng. B, vol. 71, no. 1, pp. 229-232, Feb. 2000.
15. P. C. Liu, C. Y. Hou, and Y. S. Wu, "Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers," Thin Solid Films, vol. 478, no. 1/2, pp. 280-285, May 2005.
16. C. P. Chao, Y. S. Wu, T. L. Lee, and Y. H. Wang, "Wafer bonding by Ni-induced crystallization of amorphous silicon," Jpn. J. Appl. Phys., vol. 42, no. 9A, pp. 5527-5530, Sep. 2003.
17. A. M. Myasnik, M. C. Poon, P. C. Chan, K. L. Ng, M. S. Chan, W. Y. Chan, S. Singla, and C. Y. Yuen, "On mechanism of nickel diffusion during metal induced lateral crystallization of amorphous silicon," Mater. Res. Soc. Symp. Proc., vol. 715, pp. A22.11.1-A22.11.4, 2002.
18. K. R. Olasupo and M. K. Hatalis, "Leakage current mechanism in submicron polysilicon thin-film transistors," IEEE Trans. Electron Devices, vol. 43, no. 8, pp. 1218-1223, Aug. 1996.
19. M. Yazaki, S. Takenaka, and H. Ohshima, "Conduction mechanism of leakage current observed in metal-oxide-semiconductor transistors and poly-Si thin-film transistors," Jpn. J. Appl. Phys., vol. 31, no. 2A, pp. 206-209, Feb. 1992.
20. Y. Lee, S. Bae, and S. J. Fonash, "High-performance nonhydrogenated nickel-induced laterally crystallized P-channel poly-Si TFTs," IEEE Electron Device Lett., vol. 26, no. 12, pp. 900-902, Dec. 2005.