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Volumn 715, Issue , 2002, Pages 229-232

On mechanism of nickel diffusion during metal induced lateral crystallization of amorphous silicon

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; DIFFUSION; NICKEL; RECRYSTALLIZATION (METALLURGY); SINGLE CRYSTALS;

EID: 0036920093     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-715-a22.11     Document Type: Conference Paper
Times cited : (6)

References (9)
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    • Singh Jagar, Mansun Chan, Hongmei Wang, Vincent M.C. Poon, Alexandre M.Myasniko, Characterization of MOSFETs fabricated on large-grain polysilicon on insulator, Sol. State Electron., 45, 5, 2001, 743 - 749
    • (2001) Sol. State Electron. , vol.45 , Issue.5 , pp. 743-749
    • Jagar, S.1    Chan, M.2    Wang, H.3    Poon, V.M.C.4    Myasniko, A.M.5
  • 2
    • 0034428457 scopus 로고    scopus 로고
    • Effect of nickel in large grain poly-Si film formed by nickel induced lateral crystallization and new grain enhancement method
    • W.Y.Chan, A.M.Myasnikov, M.C.Poon, C.Y.Yuen, P.G.Han, M.Chan, P.K.Ko, Effect Of Nickel In Large Grain Poly-Si Film Formed By Nickel Induced Lateral Crystallization and New Grain Enhancement Method, Mat. Res. Soc. Symp. Proc. Vol. 609, 2000, A31.6.1
    • (2000) Mat. Res. Soc. Symp. Proc. , vol.609
    • Chan, W.Y.1    Myasnikov, A.M.2    Poon, M.C.3    Yuen, C.Y.4    Han, P.G.5    Chan, M.6    Ko, P.K.7
  • 3
    • 0020543433 scopus 로고
    • Transition metals in silicon
    • E.R.Weber, Transition Metals In Silicon, Applied Physics, A30, 1983, 1 - 22.
    • (1983) Applied Physics , vol.A30 , pp. 1-22
    • Weber, E.R.1
  • 4
    • 36449008489 scopus 로고
    • Nickel atomic diffusion in amorphous silicon
    • A.Yu.Kuznetsov, B.G.Svensson, Nickel Atomic Diffusion In Amorphous Silicon, Applied Physics Letters, 66, 17, 1995, 2229 - 2231
    • (1995) Applied Physics Letters , vol.66 , Issue.17 , pp. 2229-2231
    • Kuznetsov, A.Yu.1    Svensson, B.G.2
  • 5
    • 0001533332 scopus 로고    scopus 로고
    • Nickel distribution in crystalline and amorphous silicon during solid phase epitaxy of amorphous silicon
    • A.Yu.Kuznetsov, B.G.Svensson, O.Nur, L.Hultman, Nickel Distribution In Crystalline And Amorphous Silicon During Solid Phase Epitaxy Of Amorphous Silicon, Journal Of Applied Physics, 84, 12, 1998, 6644 - 6649.
    • (1998) Journal of Applied Physics , vol.84 , Issue.12 , pp. 6644-6649
    • Kuznetsov, A.Yu.1    Svensson, B.G.2    Nur, O.3    Hultman, L.4
  • 7
    • 0000003848 scopus 로고    scopus 로고
    • Changes in the nature of the Ni diffusion mechanism on the Si(111) surface with adsorption of Co atoms
    • A.E.Dolbak, B.Z.Olshanetsky, S.A.Teys, R.A.Zhachuk, Changes In The Nature Of The Ni Diffusion Mechanism On The Si(111) Surface With Adsorption Of Co Atoms, JETP Letters, 66, 9, 1997, 643 - 646
    • (1997) JETP Letters , vol.66 , Issue.9 , pp. 643-646
    • Dolbak, A.E.1    Olshanetsky, B.Z.2    Teys, S.A.3    Zhachuk, R.A.4
  • 8
    • 36449004575 scopus 로고
    • Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films
    • C.Hayzelden, J.L.Batstone, Silicide Formation And Silicide-Mediated Crystallization Of Nickel-Implanted Amorphous Silicon Thin Films, Journal Of Applied Physics, 73, 12, 1993, 8279 - 8289
    • (1993) Journal of Applied Physics , vol.73 , Issue.12 , pp. 8279-8289
    • Hayzelden, C.1    Batstone, J.L.2
  • 9
    • 36449007964 scopus 로고
    • In situ transmission electron microscopy studies of silicide-mediated crystallization of amorphous silicon
    • C.Hayzelden, J.L.Batstone, R.C.Cammarata, In Situ Transmission Electron Microscopy Studies Of Silicide-Mediated Crystallization Of Amorphous Silicon, Applied Physics Letters, 60, 2, 1992, 225 - 1227
    • (1992) Applied Physics Letters , vol.60 , Issue.2 , pp. 225-1227
    • Hayzelden, C.1    Batstone, J.L.2    Cammarata, R.C.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.