Efficiency of cavity gettering in single and in multicrystalline silicon wafers

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 71, Issue 1-3, 2000, Pages 229-232

  Martinuzzi, S ^a   Gay Henquinet, N ^a   Perichaud I ^a   Mathieu, G ^b   Torregrossa, F ^b  

^a AIX MARSEILLE UNIVERSITY   (France)

^b Ion Beam Services   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CARRIER MOBILITY; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; HELIUM; ION IMPLANTATION; NICKEL; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

CAVITY GETTERING; SEGREGATION GETTERING;

SILICON WAFERS;

EID: 0006421583     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00380-3     Document Type: Article

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