Nickel precipitation at nanocavities in separation by implantation of oxygen

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 5, 2000, Pages 2249-2253

  Zhang, Miao ^a,b   Zeng, Xuchu ^a   Chu, Paul K ^a   Scholz, R ^c   Lin, Chenglu ^b  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; EPITAXIAL GROWTH; ION IMPLANTATION; OXYGEN; POLYCRYSTALLINE MATERIALS; PRECIPITATION (CHEMICAL); RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SUBSTRATES;

NANOCAVITIES; SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);

NICKEL;

EID: 0034275295     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1288138     Document Type: Article

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