External gettering by aluminum-silicon alloying observed from carrier recombination at dislocations in float zone silicon wafers

Applied Physics Letters

Volumn 70, Issue 20, 1997, Pages 2744-2746

  Martinuzzi, S ^a   Perichaud, I ^a   Simon, J J ^a  

^a AIX MARSEILLE UNIVERSITY   (France)

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[No Author keywords available]

Indexed keywords

EID: 0008523336     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119009     Document Type: Article

References (18)

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