Two-dimensional arrays of self-organized Ge islands obtained by chemical vapor deposition on pre-patterned silicon substrates

Nanotechnology

Volumn 18, Issue 45, 2007, Pages

  Stoica, T ^a   Shushunova, V ^b   Dais, C ^b   Solak, H ^b   Grutzmacher D ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GERMANIUM; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; SILICON; SUBSTRATES;

INTERFERENCE LITHOGRAPHY; ISLAND ARRAYS; PERIODICITY;

SURFACE STRUCTURE;

BUFFER; GERMANIUM; ION; SILICON;

ARTICLE; ATOMIC FORCE MICROSCOPY; PHOTOLUMINESCENCE; PRIORITY JOURNAL; VAPOR;

EID: 36049047749     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/45/455307     Document Type: Article

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