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Volumn 508, Issue 1-2, 2006, Pages 203-206
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Artificially positioned multiply-stacked Ge dot array
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Author keywords
Dot; Ge; Light emitting devices; Migration; Nanoelectronic devices; Patterned structures
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Indexed keywords
LIGHT EMITTING DIODES;
NANOSTRUCTURED MATERIALS;
SEMICONDUCTOR GROWTH;
DOTS;
MIGRATION;
NANOELECTRONIC DEVICES;
PATTERNED STRUCTURES;
SEMICONDUCTING GERMANIUM;
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EID: 33646115677
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2005.08.388 Document Type: Article |
Times cited : (17)
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References (11)
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