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Volumn 508, Issue 1-2, 2006, Pages 203-206

Artificially positioned multiply-stacked Ge dot array

Author keywords

Dot; Ge; Light emitting devices; Migration; Nanoelectronic devices; Patterned structures

Indexed keywords

LIGHT EMITTING DIODES; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR GROWTH;

EID: 33646115677     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.388     Document Type: Article
Times cited : (17)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.