Intrinsic defects in semi-insulating SiC: Deep levels and their roles in carrier compensation

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 465-468

  Son, N T ^a   Carlsson, P ^a   Magnusson, B ^a,b   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Norstel AB   (Sweden)

Author keywords

Carrier compensation; Electron paramagnetic resonance; Semi insulating; Vacancy

Indexed keywords

ACTIVATION ENERGY; CARBON; DEFECTS; ELECTRON RESONANCE; ELECTRON SPIN RESONANCE SPECTROSCOPY; INSULATION; PARAMAGNETISM; SEMICONDUCTING INDIUM; SILICON CARBIDE; SUBSTRATES; VACANCIES;

4H-SIC SUBSTRATE; CARRIER COMPENSATION; ELECTRON PARAMAGNETIC RESONANCES (EPR); HIGH-PURITY SEMI-INSULATING; INTRINSIC DEFECTS; SEMI-INSULATING; THERMAL ACTIVATION ENERGIES; VACANCY-RELATED COMPLEXES;

PARAMAGNETIC RESONANCE;

EID: 36049036135     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.465     Document Type: Conference Paper

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