Identification of the carbon antisite-vacancy pair in 4H-SiC

Physical Review Letters

Volumn 96, Issue 14, 2006, Pages

  Umeda, T ^a   Son, N T ^b   Isoya, J ^a   Janzen E ^b   Ohshima, T ^c   Morishita, N ^c   Itoh, H ^c   Gali, A ^d   Bockstedte, M ^e,f  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b LINKÖPING UNIVERSITY   (Sweden)

^c JAPAN ATOMIC ENERGY AGENCY   (Japan)

^d BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

^e UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^f UNIVERSITY OF THE BASQUE COUNTRY UPV EHU   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANTISITE-VACANCY; CARBON ANTISITE; CHARGE STATE;

CARBON; HYDROGEN; INSULATING MATERIALS; PARAMAGNETIC RESONANCE; SILICON CARBIDE;

SEMICONDUCTOR MATERIALS;

EID: 33645812955     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.96.145501     Document Type: Article

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