HTCVD Grown Semi-Insulating SiC Substrates

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 33-38

  Ellison, A ^a   Magnusson, B ^a,b   Son, N T ^b   Storasta, L ^b   Janzen E ^b  

^a Okmetic AB   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

HTCVD Growth; Intrinsic Defects; Micropipe Closing; Purity; Semi Insulating Substrate

Indexed keywords

ABSORPTION; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTAL GROWTH; DOPING (ADDITIVES); INSULATING MATERIALS; MICROWAVE DEVICES; PARAMAGNETIC RESONANCE; SECONDARY ION MASS SPECTROMETRY;

SEMI-INSULATING MATERIALS;

SILICON CARBIDE;

EID: 0242665534     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.33     Document Type: Conference Paper

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