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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 11, 1998, Pages 5866-5869

Transient enhanced diffusion of boron in the presence of dislocations produced by amorphizing implantation in silicon

(1) Uematsu, Masashi a

a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

Author keywords

Amorphizing implantation; Boron; Dislocations; Silicon; Simulation; Transient enhanced diffusion

Indexed keywords

AMORPHIZATION; ANNEALING; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

TRANSIENT ENHANCED DIFFUSION (TED);

SEMICONDUCTING BORON;

EID: 0032206452 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.5866 Document Type: Article

Times cited : (10)

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