Effect of deposition temperature and oxygen flow rate on properties of low dielectric constant SiCOH film prepared by plasma enhanced chemical vapor deposition using diethoxymethylsilane

Surface and Coatings Technology

Volumn 200, Issue 10 SPEC. ISS., 2006, Pages 3134-3139

  Cheng, Y L ^a   Wang, Y L ^a   Hwang, G J ^a   O'Neill, M L ^b   Karwacki, E J ^b   Liu, P T ^c   Chen, C F ^c  

^a NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

^b AIR PRODUCTS AND CHEMICALS INC   (United States)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

DEMS; Diethoxymethylsiliane; Low dielectric constant; Low k; SiCOH

Indexed keywords

FILMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HARDNESS; OXYGEN; PERMITTIVITY; REFRACTIVE INDEX; SILICON COMPOUNDS; THERMAL EFFECTS;

DIETHOXYMETHYLSILANE; LOW DIELECTRIC CONSTANT;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

FILMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HARDNESS; OXYGEN; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SILICON COMPOUNDS; THERMAL EFFECTS;

EID: 31644451390     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2005.07.015     Document Type: Article

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