Chemical bond structure on Si-O-C composite films with a low dielectric constant deposited by using inductively coupled plasma chemical vapor deposition

Journal of the Korean Physical Society

Volumn 41, Issue 5, 2002, Pages 769-773

  Jing, Shou Yong ^a   Lee, Heon Ju ^b   Choi, Chi Kyu ^b  

^a SHENZHEN UNIVERSITY   (China)

^b Jeju National University   (South Korea)

Author keywords

Dielectric Constant; ICPCVD; Low k material; Nano pore

Indexed keywords

EID: 0036865499     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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