Influence of Si doping on the optical and structural properties of InGaN films

Journal of Crystal Growth

Volumn 290, Issue 2, 2006, Pages 374-378

  Li, Da Bing ^a   Katsuno, Takuya ^a   Nakao, Keisuke ^a   Aoki, Masakazu ^a   Miyake, Hideto ^a   Hiramatsu, Kazumasa ^a  

^a MIE UNIVERSITY   (Japan)

Author keywords

A1. Si doping; A1. V shaped defect; A3. MOVPE; B1. InGaN

Indexed keywords

INDIUM COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SILICON; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

INGAN; SI DOPING; V-SHAPED DEFECT;

DOPING (ADDITIVES);

EID: 33646341247     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.01.058     Document Type: Article

References (16)

1. Kanie H., and Yoshimura T. Phys. Stat. Sol.(c) (2003) 2729
2. Kusakabe K., Hara T., and Ohkawa K. J. Appl. Phys. 97 (2005) 043503
3. Ryu M.-Y., Yu Y.J., Shin E.-J., Yu P.W., Lee J.I., Yu S.K., Oh E.S., Nam O.H., Sone C.S., Park Y.J., and Kim T.I. Sol. Stat. Commun. 116 (2000) 675
4. Uchida K., Tang T., Goto S., Mishima T., Niwa A., and Gotoh J. Appl. Phys. Lett. 74 (1999) 1153
5. Wu X.H., Elsass C.R., Abare A., Mack M., Keller S., Petroff P.M., DenBaars S.P., Speck J.S., and Rosner S.J. Appl. Phys. Lett. 72 (1998) 692
6. Chen Y., Takeuchi T., Amano H., Akasaki I., Yamada N., Kaneko Y., and Wang S.Y. Appl. Phys. Lett. 72 (1998) 710
7. Sharma N., Thomas P., Tricker D., and Humphreys C. Appl. Phys. Lett. 77 (2000) 1274
8. Jahnen B., Albrecht M., Dorsch W., Christiansen S., Strunk H.P., Hanser D., Davis, and MRS R.F. Internet J. Nitride Semicond. Res. 1 (1996) 8
9. K Cho H., Lee J.Y., Yang G.M., and Kim C.S. Appl. Phys. Lett. 79 (2001) 215
10. Cho H.K., Lee J.Y., and Yang G.M. Appl. Phys. Lett. 80 (2002) 1370
11. Watanabe K., Yang J.R., Huang S.Y., Inoke K., Hsu J.T., Tu R.C., Yamazaki T., Nakanishi N., and Shiojiri M. Appl. Phys. Lett. 82 (2003) 718
12. Norhrup J.E., and Romano L.T. Appl. Phys. Lett. 74 (1999) 2319
13. Koide N., Hikosaka T., Honda Y., Yamaguchi M., and Sawaki N. J. Crystal Growth 284 (2005) 341
14. Son K.S., Kim D., Cho H.K., Lee K., Kim S., Park K., and Kim J. Phys. Stat. Sol. (c) (2003) 2095
15. Cremades A., Görgens L., Ambacher O., Stutzmann M., and Scholz F. Phys. Rev. B 61 (2000) 2812
16. Munkholm A., et al. Appl. Phys. Lett. 77 (2000) 1626