Theoretical and experimental limits of quantitative analysis of strain and chemistry of InGaAs/GaAs layers using (200) darkfield TEM imaging

Microscopy of Semiconducting Materials 2003

Volumn , Issue , 2018, Pages 203-206

  Cagnon, J ^a   Buffat, P A ^a   Stadelmann, P A ^a   Leifer, K ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM COMPOUNDS; III-V SEMICONDUCTORS; INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

DARK FIELD; DARK-FIELD TEM; DYNAMICAL CALCULATIONS; INGAAS/GAAS; QUANTUM HETEROSTRUCTURES; STRAIN CONTRAST;

CHEMICAL ANALYSIS;

EID: 85053296727     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1201/9781351074636     Document Type: Chapter

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