Optimization of material parameters in 1.3-μm InGaAsN-GaAs lasers

IEEE Photonics Technology Letters

Volumn 15, Issue 1, 2003, Pages 6-8

  Tomić, Stanko ^a   O'Reilly, Eoin P ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

1.3 m emission; Dilute nitride materials; InGaAsN; Semiconductor lasers

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; HAMILTONIANS; LIGHT EMISSION; NITROGEN; OPTIMIZATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPONTANEOUS EMISSION;

SPONTANEOUS EMISSION LINE BROADENING; STRAIN RELAXATION;

QUANTUM WELL LASERS;

EID: 0037250533     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.805794     Document Type: Article

References (20)

1. K. D. Choquette et al., "Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 μm," Electron. Lett., vol. 36, pp. 1388-1390, 2000.
2. G. Steinle, H. Riechert, and A. Yu. Egorov, "Monolithic VCSEL with InGaAsN active region emitting at 1.28 μm and CW output power exceeding 500 μW at room temperature," Electron. Lett., vol. 37, pp. 93-95, 2001.
3. T. Kageyama et al., "Room temperature continuous-wave operation of GaInNAs/GaAs VCSEL's grown by chemical beam epitaxy with output power exceeding 1 mW," Electron. Lett., vol. 37, pp. 225-226, 2001.
4. H. Riechert et al., "InGaAsN/GaAs heterostructures for long-wave-length light-emitting devices," Nanotechnology, vol. 11, pp. 201-205, 2000.
5. W. Shan et al., "Band anticrossing in GaInNA's alloys," Phys. Rev. Lett., vol. 82, pp. 1221-1224, 1999.
6. B. N. Murdin et al., "Band anticrossing in dilute InNSb," Appl. Phys. Lett., vol. 81, pp. 256-258, 2002.
7. P. J. Klar et al., "(Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen," Phys. Rev. B, vol. 64, 2001, art. no. 121 203.
8. A. Polimeni, et al., "Effect of nitrogen on the temperature dependence of the energy gap in InGaAsN/GaAs single quantum wells," Phys. Rev. B, vol. 63, 2001, art.no. 195320.
9. x with x < 0.03," Phys. Rev. Lett., vol. 82, pp. 3312-3315, 1999.
10. C. G. Van de Walle, "Band lineups and deformation potentials in the model-solid theory," Phys. Rev. B, vol. 39, pp. 1871-1883, 1989.
11. E. P. O'Reilly, "Valence band engineering in strained-layer structures," Semicond. Sci. Technol., vol. 4, pp. 121-137, 1989.
12. x/GaAs multiple quantum wells in the dilute-N regime from pressure and kp studies," Phys. Rev. B, vol. 66, no. 165321, 2002.
13. J. Hader, S. W. Koch, J. V. Moloney, and E. P. O'Reilly, "Gain in 1.3 μm materials: InGaNA's and InGaPA's semiconductor quantum-well lasers," Appl. Phys. Lett., vol. 77, pp. 630-632, 2000.
14. M. Hofmann et al., "Gain spectra of (Ga, In)(N, As) laser diodes for the 1.3 μm wavelength regime," Appl. Phys. Lett., vol. 78, pp. 3009-3011, 2001.
15. S. Tomić and E. P. O'Reilly, "Gain characteristics of ideal dilute nitride quantum well lasers," Physica E, vol. 13, pp. 1102-1105, 2002.
16. R. Fehse et al. "A quantitative study of radiative,auger and defect related recombination processes in 1.3 μm GaInNAs-based quantum-well lasers," IEEE J. Select. Topics Quantum Electron., vol. 8, pp. 801-810, July/Aug. 2002.
17. W. W. Chow and S. W. Koch, Semiconductor-Laser Fundamentals. Berlin, Germany: Springer, 1999.
18. J. J. Coleman, "Strained layer quantum well heterostructures lasers," in Quantum Well Lasers, P. S. Zory Jr., Ed. Boston, MA: Academic, 1993, p. 367.
19. W. W. Chow et al. "Laser gain and threshold properties in compressive-strained and lattice-matched GaInNAs/GaAs quantum wells," Appl. Phys. Lett., vol. 75, pp. 2891-2893, 1999.
20. S. Seki et al., "Theoretical-analysis of pure effects of strain and quantum confinement on differential gain in InGaAsP/InP strained-layer quantum-well lasers," IEEE J. Quantum Electron., vol. 30, pp. 500-510, 1994.