A dual BARC method for lithography and etch for Dual damascene with low K

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 5 A, 2003, Pages 2649-2653

  Mukherjee Roy, Moitreyee ^a   Bliznetsov, Vladimir ^a   Samudra, Ganesh ^b  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

BARC; Dual damascene; Etching; Faceting; Low K; Patterning

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC PROPERTIES; ETCHING; LITHOGRAPHY;

CRITICAL DIMENSION (CD) VARIATION;

ANTIREFLECTION COATINGS;

EID: 0038380867     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2649     Document Type: Article

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