Wet-recess gap-fill materials for an advanced dual damascene process

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6519, Issue PART 2, 2007, Pages

  Shinjo, Tetsuya ^a   Takei, Satoshi ^a   Horiguchi, Yusuke ^a   Nakajima, Yasuyuki ^a  

^a NISSAN CHEMICAL INDUSTRIES LTD   (Japan)

Author keywords

Dual damascene (DD); Gap fill material; Isolated dense fill bias; Planarization; Wet recess

Indexed keywords

ORGANIC POLYMERS; PLASMA ETCHING; SUBSTRATES; WAFER BONDING;

DUAL DAMASCENE (DD); GAP FILL MATERIALS; PLANARIZATION; WET RECESS;

PHOTORESISTS;

EID: 35148899665     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.712461     Document Type: Conference Paper

References (13)

1. Peter Singer, Semiconductor International, pp 91-98, June 1988.
2. Peter Singer, Semiconductor International, pp 68-72, August 1999.
3. Ken Monnig, Future Fab International, pp 233-340, 1998.
4. Ruth DeJuIe, Semiconductor International, pp 94-102, June 2000.
5. Lamb III et al; Fill material for Dual Damascene process, U.S. Patent 6, 391, 472, May 21, 2002.
6. Gene E. Fuller, "Optical Lithography" in Handbook of Semiconductor Manufacturing Technology, edited by Yoshio Nishi and Robert Doering, 463, Marcel Dekker, Inc., New York, 2000.
7. Ho et al, Plug filling for Dual Damascene process, US Patent 6, 488, 509, Dec. 3 2002.
8. Nickolas Brakensiek, Kevin Edwards, Paul Williams, and Deng Jian Ping, Advanced process considerations for BARC and gap fill technology in via-first dual damascene integration for sub 0.13um technology, SEMCON China 2004 SEMI Technology Symposium, March 17-19, 2004.
9. Owen Hehmeyer, Abhishek Singh, Ramkumar Subramanian, and Joffre Bernard, Bottom anti-reflective coatings: fluid property characterization and wetting tendency, Proceedings of SPIE, vol. 4690, pp 1052-1064, 2002.
10. Stanley Wolf, Silicon Processing for the VLSI Era, Volume 4 - Deep-submicron process technology, chapter 15, 2002.
11. Hung et al., Method of forming via first dual damascene interconnect structure, U.S. Patent 6, 458, 705, Oct. 1 2002.
12. Nichoras Brakenseik, Carlton Washburn, Earnest Murphy, Novel BARC etch back method for via first dual damascene process, Proceedings Arch Interface 2003.
13. Mandar Bhave et al., Developer-soluble gap fill materials for patterning metal trenches in via-first dual damascene process, Proceedings of SPIE, vol. 5376, 2004.