Developer-soluble gap fill materials for patterning metal trenches in via-first dual damascene process

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5376, Issue PART 2, 2004, Pages 640-647

  Bhave, Mandar ^a   Edwards, Kevin ^a   Washburn, Carlton ^a   Takei, Satoshi ^b   Sakaida, Yasushi ^b   Nakajima, Yasuyuki ^b  

^a BREWER SCIENCE INC   (United States)

^b NISSAN CHEMICAL INDUSTRIES LTD   (Japan)

Author keywords

Developer; Gap fill material; Iso dense fill bias; Via first Dual damascene (DD) process

Indexed keywords

ANTIREFLECTION COATINGS; CHEMICAL POLISHING; COATING TECHNIQUES; INTEGRATION; PROBLEM SOLVING; REACTIVE ION ETCHING; THROUGHPUT;

DEVELOPER; GAP FILL MATERIAL; ISO-DENSE FILL BIAS; VIA-FIRST DUAL DAMASCENE (DD) PROCESS;

PHOTORESISTORS;

EID: 3843073043     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.534338     Document Type: Conference Paper

References (4)

1. Ho et al., "Plug filling for dual damascene process," U.S. Patent No. 6,488,509, Dec. 3 2002.
2. Lamb III et al., "Fill material for dual damascene processes," U.S. Patent No. 6,391,472, May 21, 2002.
3. Hung et al., "Method of forming via-first dual damascene interconnect structure," U.S. Patent No. 6,458,705, Oct. 1, 2002.
4. Brakenseik N., C. Washbum and E. Murphy, "Novel BARC Etch back method for Via-First Dual Damascene processes," Proceedings, Interface 2003, The Arch Chemicals Microlithography Symposium, Coronado, CA, Sept. 22-23, 2003.