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Volumn 5376, Issue PART 2, 2004, Pages 697-702

Design and development of high etch rate organic bottom antireflective coating for sub-100 nm node and beyond

Author keywords

193 nm; Bottom antireflective coating; Etch rate; Photolithography

Indexed keywords

193 NM; BOTTOM ANTI-REFLECTIVE COATINGS (BARC); ETCH RATE; THERMOSETTING;

EID: 3843147181     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.537883     Document Type: Conference Paper
Times cited : (5)

References (6)
  • 2
    • 0000765436 scopus 로고    scopus 로고
    • Study of dry etching resistance of methacrylate polymers for ArF excimer laser lithography
    • T. Ohfuji, M. Endo, M. Takahashi, T. Naito,T. Tatsumi, K. Kuhara M. Sasago, "Study of dry etching resistance of methacrylate polymers for ArF excimer laser lithography", Proc. SPIE 3333, 595, 1998.
    • (1998) Proc. SPIE , vol.3333 , pp. 595
    • Ohfuji, T.1    Endo, M.2    Takahashi, M.3    Naito, T.4    Tatsumi, T.5    Kuhara, K.6    Sasago, M.7
  • 5
    • 0036029881 scopus 로고    scopus 로고
    • Optimization of organic bottom antireflective coatings' compatibility with ArF resists
    • Z. Xiang, J. Shan, E. Gonzalez, H. Wu, S. Ding, M. Neisser, "Optimization of Organic Bottom Antireflective Coatings' Compatibility with ArF Resists", Proc. SPIE 4690, 1102, 2002.
    • (2002) Proc. SPIE , vol.4690 , pp. 1102
    • Xiang, Z.1    Shan, J.2    Gonzalez, E.3    Wu, H.4    Ding, S.5    Neisser, M.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.