High-characteristic-temperature 1.3-μm-band laser on an ingaas ternary substrate grown by the traveling liquidus-zone method

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 13, Issue 5, 2007, Pages 1295-1301

  Arai, Masakazu ^a   Watanabe, Takao ^a,b   Yuda, Masahiro ^a   Kinoshita, Kyoichi ^c   Yoda, Shinichi ^c   Kondo, Yasuhiro ^a  

^a NTT CORPORATION   (Japan)

^b HIROSAKI UNIVERSITY   (Japan)

^c JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

High characteristic temperature; InGaAs ternary substrate; Laser

Indexed keywords

CRYSTAL GROWTH; SEMICONDUCTOR LASERS; SUBSTRATES; TERNARY SYSTEMS; WAVELENGTH;

HIGH CHARACTERISTIC TEMPERATURE; LONG-WAVELENGTH LASING; TERNARY SUBSTRATES; TRAVELING LIQUIDUS-ZONE (TLZ) METHOD;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 35348997153     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2007.903850     Document Type: Conference Paper

References (25)

1. C. A. Wang and H. K. Choi, "Organometallic vapor phase epitaxy of high-power strained-layer InGaAs-AlGaAs diode lasers," J. Quantum Electron., vol. 27, pp. 681-686, 1991.
2. H. Temkin, D. Coblentz, R. A. Logan, J. P. van der Ziel, T. Tanbun-ek, R. D. Yadvish, and A. M. Sergent, "High temperature characteristics of InGaAsP/InP laser structure," Appl. Phys. Lett., vol. 62, pp. 2402-2404, 1993.
3. N. Tansu, J. Y. Yeh, and L. J. Mawst, "Extremely-low threshold-current-density InGaAs quantum well lasers with emission wavelength of 1214-1233 nm," Appl. Phys. Lett., vol. 82, pp. 4038-4040, 2003.
4. L. W. Sung and H. H. Lin, "Highly strained 1.24-μm InGaAs/GaAs quantum-well lasers," Appl. Phys. Lett., vol. 83, pp. 1107-1109, 2003.
5. S. M. Wang, Q. X. Zhao, X. D. Wang, Y. Q. Wei, M. Sadeghi, and A. Larsson, "1.3 to 1.5 μm light emission from InGaAs/GaAs quantum wells," Appl. Phys. Lett., vol. 85, pp. 875-877, 2004.
6. I. Tångring, S. M. Wang, M. Sadeghi, and A. Larsson, "1.27 μm metamorphic InGaAs quantum well lasers on GaAs substrates," Electron. Lett., vol. 42, pp. 691-693, 2006.
7. Y. Arakawa and H. Sasaki, "Multidimensional well laser and temperature dependence of its threshold current," Appl. Phys. Lett., vol. 40, pp. 939-941, 1982.
8. D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, and D. G. Deppe, "1.3 μm room-temperature GaAs-based quantum-dot laser," Appl. Phys. Lett., vol. 73, pp. 2564-2566, 1998.
9. P. G. Eliseev, H. Li, A. Stintz, G. T. Liu, T. C. Newell, K. J. Malloy, and L. F. Lester, "Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes," Appl. Phys. Lett., vol. 77, pp. 262-264, 2000.
10. M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y Yazawa, M. Okai, and K. Uomi, "GaInNAs: A novel material for long-wavelength semiconductor lasers," IEEE J. Sel. Topics Quantum Electron., vol. 3, no. 3, pp. 719-730, Jun. 1997.
11. S. Sato, Y. Osawa, T. Saitoh, and I. Fujimura, "Room-temperature pulsed operation of 1.3 μm GaInNAs/GaAs laser diodes," Electron. Lett., vol. 33, pp. 1386-1387, 1997.
12. N. Tansu, J. Yeh, and J. Mawst, "Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers," Appl. Phys. Lett., vol. 83, pp. 2512-2514, 2003.
13. H. Ishikawa, "Theoretical gain of strained quantum well grown on an InGaAs ternary substrate," Appl. Phys. Lett., vol. 63, pp. 712-714, 1993.
14. H. Ishikawa and I. Suemune, "Analysis of temperature dependent optical gain of strained quantum, well taking account of carriers in the SCH layer," IEEE Photon. Technol. Lett., vol. 6, no. 3, pp. 344-347, Mar. 1994.
15. 0 (140 K) and low-threshold long-wavelength strained quantum well lasers on InGaAs ternary substrates," Electron. Lett., vol. 33, no. 21, pp. 1795-1797, 1997.
16. K. Otsubo, H. Shoji, T. Kusunoki, T. Suzuki, T. Uchida, Y. Nishijima, K. Nakajima, and H. Ishikawa, "Long-wavelength strained quantum-well lasers oscillating up to 210°C on InGaAs ternary substrates," IEEE Photon. Technol. Lett., vol. 10, no. 8, pp. 1073-1075, Aug. 1998.
17. K. Otsubo, Y. Nishijima, T. Uchida, H. Shoji, K. Nakajima, and H. Ishikawa, "1.3 μm InGaAs/InAlGaAs strained quantum well lasers on InGaAs ternary substrates," Jpn. J. Appl. Phys., vol. 38, pp. L312-L314, 1999.
18. 0.75As crystal growth," J. Cryst. Growth, vol. 173, pp. 42-50, 1997.
19. 0.7As crystal growth by the traveling liquidus-zone method," J. Cryst. Growth, vol. 225, pp. 59-66, 2001.
20. T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys., vol. 40, pp. 467-471, 2001.
21. N. Tansu, Y. Chang, T. Takeuchi, D. P. Bour, S. W. Corzine, M. R. T. Tan, and L. J. Mawst, "Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ > 1.17 μm) quantum-well lasers," IEEE Trans. Quantum Electron, vol. 38, no. 6, pp. 640-651, Jun. 2002.
22. J. Piprek, Semiconductor Optoelectronic Devices. New York: Academic, 2003.
23. J. Piprek, T. Troger, B. Schroter, J. Kolodzey, and C. S. Ih, "Thermal conductivity reduction in GaAs-AlAs distributed Bragg reflector," IEEE Photon. Technol Lett., vol. 10, no. 1, pp. 81-83, Jan. 1998.
24. 1-x As on GaAs (001)," J. Cryst. Growth, vol. 114, pp. 693-699, 1991.
25. D. Schlenker, T. Miyamoto, Z. Chen, F. Koyama, and K. Iga, "Growth of highly strained GaInAs/GaAs quantum wells for 1.2 μm wavelength lasers," J. Cryst. Growth, vol. 209, pp. 27-36, 2000.