High T0 (140K) and low-threshold long-wavelength strained quantum well lasers on InGaAs ternary substrates

Electronics Letters

Volumn 33, Issue 21, 1997, Pages 1795-1797

  Otsubo, K ^a   Shoji, H ^a   Kusunoki, T ^b   Suzuki, T ^b   Uchida, T ^a   Nishijima, Y ^b   Nakajima, K ^b   Ishikawa, H ^a  

^a NEC CORPORATION   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Semiconductor junction lasers; Semiconductor quantum wells

Indexed keywords

CURRENT DENSITY; HIGH TEMPERATURE PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

LONG WAVELENGTH SEMICONDUCTOR LASERS;

QUANTUM WELL LASERS;

EID: 0031561247     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971238     Document Type: Article

References (11)

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