Homogeneous In0.3Ga0.7As crystal growth by the traveling liquidus-zone method

Journal of Crystal Growth

Volumn 225, Issue 1, 2001, Pages 59-66

  Kinoshita, K ^a   Kato, H ^a   Iwai, M ^b   Tsuru, T ^b   Muramatsu, Y ^b   Yoda, S ^a  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b Co Ltd   (Japan)

Author keywords

A1. Solid solutions; A2. Single crystal growth; B1. Gallium compounds; B2. Semiconducting ternary compounds

Indexed keywords

FREEZING; INTERFACES (MATERIALS); SATURATION (MATERIALS COMPOSITION); SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SOLID SOLUTIONS; THERMAL GRADIENTS;

TRAVELING LIQUIDUS-ZONE METHOD;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0035339238     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01033-8     Document Type: Article

References (13)

1. Ishikawa H. Appl. Phys. Lett. 63:1993;712.
2. Smith V.G., Tiller W.A., Rutter J.W. Can. J. Phys. 33:1955;723.
3. Kinoshita K., Yamada T. J. Crystal Growth. 147:1995;91.
4. Naumann R.J. J. Crystal Growth. 142:1994;253.
5. Kinoshita K., Kato H., Matsumoto S., Yoda S. J. Crystal Growth. 216:2000;37.
6. Kinoshita K., Kato H., Matsumoto S., Yoda S., Yu J., Natsuisaka M., Masaki T., Koshikawa N., Nakamura Y., Nakamura T., Ogiso A., Amano S., Goto K., Arai Y., Fukazawa T., Kaneko M., Itami T. J. Jpn. Soc. Microgravity Appl. 17:2000;57.
7. Weber W., Duffar T., Favier J.J. Microgravity Sci. Technol. VI(3):1991;166.
8. Pfann W.G. Zone Melting. 1958;Wiley, New York.
9. Nakajima K., Kusunoki T. J. Crystal Growth. 169:1996;217.
10. Kodama S., Furumura Y., Kinoshita K., Kato H., Yoda S. J. Crystal Growth. 208:2000;165.
11. Hashio K., Tatsumi M., Kato H., Kinoshita K. J. Crystal Growth. 210:2000;471.
12. H. Nakamura, H. Kato, K. Kinoshita, S. Yoda, J. Crystal Growth, to be submitted.
13. S. Matsumoto, T. Maekawa, J. Phys. D, to be submitted.