Highly strained 1.24-μm InGaAs/GaAs quantum-well lasers

Applied Physics Letters

Volumn 83, Issue 6, 2003, Pages 1107-1109

  Sung, L W ^a   Lin, H H ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EMISSION WAVELENGTHS;

QUANTUM WELL LASERS;

EID: 0041924981     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1600504     Document Type: Article

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