1.3 to 1.5 μm light emission from InGaAs/GaAs quantum wells

Applied Physics Letters

Volumn 85, Issue 6, 2004, Pages 875-877

  Wang, S M ^a   Zhao, Q X ^a   Wang, X D ^a   Wei, Y Q ^a   Sadeghi, M ^a   Larsson, A ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC FIELDS; EPITAXIAL GROWTH; FERMI LEVEL; GROUND STATE; LASERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM THEORY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

PHOTOLUMINESCENCE (PL); QUANTUM DOTS (QD); QUANTUM WELLS (QW); WAVELENGTH REDSHIFT;

LIGHT EMISSION;

EID: 4344607668     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1759066     Document Type: Article

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