Bridgman growth of compositionally graded InxGa1-xAs (x = 0.05-0.30) single crystals for use as seeds for In0.25Ga0.75As crystal growth

Journal of Crystal Growth

Volumn 173, Issue 1-2, 1997, Pages 42-50

  Nakajima, Kazuo ^a   Kusunoki, Toshihiro ^a   Otsubo, Koji ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL LATTICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

BINARY CRYSTALS; BRIDGMAN METHOD; LATTICE MATCHING;

SINGLE CRYSTALS;

EID: 0031546982     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00803-2     Document Type: Article

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