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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 2 A, 2001, Pages 467-471

Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers

(8) Kondo, T a Schlenker, D a Miyamoto, T a Chen, Z a Kawaguchi, M a Gouardes, E a Koyama, F a Iga, K a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

GaInAs GaAs; Highly strained; Lifetime; Quantum well; Semiconductor laser

Indexed keywords

CURRENT DENSITY; GAIN MEASUREMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE;

EDGE EMITTING LASERS; GALLIUM INDIUM ARSENIDE; HIGHLY STRAINED LASERS; OXIDE CONFINEMENT;

QUANTUM WELL LASERS;

EID: 0035246292 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.467 Document Type: Article

Times cited : (40)

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