Capture kinetics at dislocation-related deep levels in III-V heterostructures

EPJ Applied Physics

Volumn 27, Issue 1-3, 2004, Pages 201-205

  Yastrubchak, O ^a   Wosinski, T ^a   Makosa, A ^a   Figielski, T ^a   Porowski, S ^b   Grzegory, I ^b   Czernecki, R ^b   Perlin, P ^b  

^a INSTITUTE OF PHYSICS   (Poland)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRON BEAMS; LIQUID PHASE EPITAXY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR LASERS; TRANSMISSION ELECTRON MICROSCOPY;

ENERGY STATES OF ADSORBED SPECIES; III-V SEMICONDUCTORS; IMPURITY AND DEFECT LEVELS; LINEAR DEFECTS DISCLINATIONS; LINEAR DEFECTS DISLOCATIONS;

HETEROJUNCTIONS;

EID: 10344237012     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2004139     Document Type: Conference Paper

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