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Volumn 281, Issue 1, 2005, Pages 107-114

Properties of InGaN blue laser diodes grown on bulk GaN substrates

(19) Perlin, P a,b Suski, T a Leszczynski M a,b Prystawko, P a Swietlik T a Marona, L a Wisniewski P a Czernecki, R b Nowak, G a Weyher, J L a Kamler, G a Borysiuk, J a Litwin Staszewska, E a Dmowski, L a Piotrzkowski, R a Franssen, G a Grzanka, S a Grzegory, I a,b Porowski, S a

a INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

b TOPGAN LTD (Poland)

Author keywords

A3. Metalorganic vapor phase deposition; A3. Semiconducting III V materials; B3. Laser diode

Indexed keywords

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; OPTOELECTRONIC DEVICES; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; ULTRAVIOLET RADIATION;

METALORGANIC VAPOR PHASE DEPOSITION; ROCKING CURVES; SEMICONDUCTING III-V MATERIALS; STRUCTURAL QUALITY;

SEMICONDUCTOR LASERS;

EID: 20844440314 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.03.018 Document Type: Conference Paper

Times cited : (10)

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