Deep-level defects and n-type-carrier concentration in nitrogen implanted GaN

Applied Physics Letters

Volumn 69, Issue 17, 1996, Pages 2525-2527

  Haase, D ^a   Schmid, M ^a   Kurner W ^a   Dornen A ^a   Harle V ^a   Scholz, F ^a   Burkard, M ^a   Schweizer, H ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000025680     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117727     Document Type: Article

References (11)

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11. We used the software TRIM for this calculation.