Reduction of line edge roughness and post resist trim pattern collapse for sub 60 nm gate patterns using gas-phase resist fluorination

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5753, Issue II, 2005, Pages 1024-1033

  Montgomery, Patrick K ^a   Peters, Richie ^a   Garza, Cesar ^a   Cobb, Jonathan ^a   Darlington, Bill ^a   Parker, Colita ^a   Filipiak, Stan ^a   Babbitt, Dan ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

193; Collapse; Fluorination; Ler; Pattern; Resist

Indexed keywords

193; COLLAPSE; FLUORINATION; LINE EDGE ROUGHNESS (LER); RESIST;

BENDING (DEFORMATION); DEFORMATION; EDGE DETECTION; ETCHING; FLUORINE; GATES (TRANSISTOR); PHOTORESISTS; SUBSTRATES;

ROUGHNESS MEASUREMENT;

EID: 24644450102     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.600785     Document Type: Conference Paper

References (5)

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3. Shahid Rauf, et al. Modeling the Impact of Photoresist Trim Etch Process on Photoresist Surface roughness, Journal of Vacuum Science Technology, Vol. B 21(2), Mar/Apr 2003, p. 655
4. International Technology Roadmap for Semiconductors 2003
5. Toshihiko Tanaka, et al. Mechanism of Resist Pattern Collapse during Development Process. Jpn. J. Applied Physiscs, Vol. 32, Dec. 1993, p. 6059