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Journal of Electronic Materials

Volumn 27, Issue 4, 1998, Pages 175-178

Improved sidewall morphology on dry-etched SiO2 masked GaN features

(4) Ren, F a,b Pearton, S J b Shul, R J c Han, J c

a LUCENT TECHNOLOGIES (United States)

b University of Florida (United States)

c SANDIA NATIONAL LABORATORIES (United States)

Author keywords

GaN; Mask; Photoresist; Plasmas

Indexed keywords

EID: 0039624301 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-998-0382-y Document Type: Article

Times cited : (14)

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