One-dimensional mesopore-array formation on low doped N-type silicon

Electrochemistry Communications

Volumn 9, Issue 7, 2007, Pages 1491-1496

  Bao, X Q ^a   Jiao, J W ^a   Wang, Y L ^a   Zhang, Y ^a   Ge, D H ^a   Na, Kyoung Won ^b   Choi, H ^b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

1D mesopore array; Breakdown mechanism; Linear defects; SCR effects

Indexed keywords

ANODIC OXIDATION; DOPING (ADDITIVES); ELECTRIC SPACE CHARGE; ELECTROLYTES; MATHEMATICAL MODELS; SILICON;

BREAKDOWN MECHANISM; LINEAR DEFECTS; PORE DENSITIES; SCR EFFECTS;

MESOPOROUS MATERIALS;

EID: 34250207996     PISSN: 13882481     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elecom.2007.02.010     Document Type: Article

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