One dimensional macropore-array formation on low doped n-type silicon

Electrochemistry Communications

Volumn 9, Issue 7, 2007, Pages 1689-1694

  Bao, X Q ^a   Jiao, J W ^a   Duan, F ^a   Wang, Y L ^a   Na, K W ^b   Choi, H ^b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

1D macropore array; SCR model; Transition from macropore to mesopore formation; Tunneling breakdown

Indexed keywords

ANODIC OXIDATION; CURRENT DENSITY; DOPING (ADDITIVES); ELECTRON TUNNELING; SILICON; STABILIZERS (AGENTS);

LINEAR DEFECTS; MACROPORE ARRAYS; MESOPORE FORMATION; PORE DENSITY; SCR MODEL; TUNNELING BREAKDOWN;

POROUS MATERIALS;

EID: 34250201399     PISSN: 13882481     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elecom.2007.03.024     Document Type: Article

References (34)

1. Lehmann V., and Föll H. J. Electrochem. Soc. 137 (1990) 653
2. Lehmann V. J. Electrochem. Soc. 140 (1993) 2836
3. Al Rifai M.H., Christophersen M., Ottow S., Carstensen J., and Föll H. J. Electrochem. Soc. 147 (2000) 627
4. Propst E.K., and Kohl P.A. J. Electrochem. Soc. 141 (1994) 1006
5. Ponomarev E.A., and Levy-Clement C. J. Electrochem. Soc. 1 (1998) 1002
6. Lehmann V., and Rönnebeck S. J. Electrochem. Soc. 146 8 (1999) 2968
7. Carstensen J., Christophersen M., and Föll H. Mater. Sci. Eng. B 69-70 (2000) 23-28
8. Lehmann V., Stengl R., and Luigart A. Mater. Sci. Eng. B 69-70 (2000) 11-22
9. Claussen J.C., Carstensen J., Christophersen M., Langa S., and Foll H. Chaos 13 1 (2003) 217
10. Theunissen M.J.J. J. Electrochem. Soc. 119 (1972) 351
11. Beale M.I.J., Benjamin J.D., and Uren M.J. J. Cryst. Growth 73 (1985) 622
12. Smith R.L., Chuang S.F., and Collins S.D. J. Electron. Mater. 17 (1988) 533
13. Searson P.C., Macaulay J.M., and Prokes S.M. J. Electrochem. Soc. 139 (1992) 3373
14. Kang Y., and Jorne J. J. Electrochem. Soc. 140 (1993) 2258
15. Parkhutik V.P. Porous Silicon (1994), World Scientific p. 301
16. Valance A. Phys. Rev. B. 52 (1995) 8323
17. Wehrspohn R.B., Ozanan F., and Chazalviel J.N. J. Electrochem. Soc. 146 9 (1999)
18. Christophersen M., Carstensen J., and Föll H. Phys. Status Solidi (a) 182 1 (2000) 45-50
19. Föll H., Christophersen M., Carstensen J., and Hasse G. Mater. Sci. Eng. R 39 (2002) 93-141
20. Matthias S., Müller F., Schilling J., and Gösele U. Appl. Phys. A 80 (2005) 1391
21. Zhang X.G. Electrochemistry of Silicon and its Oxides (2001), Kluwer Academic, Horwell, MA
22. Zhang X.G. J. Electrochem. Soc. 151 1 (2004) C69-C80
23. Allongue P., Costa-Kieling V., and Gerischer H. J. Electrochem. Soc. 140 (1993) 1009
24. Allongue P., Villeneuve C., Pinsard L., and Bernard M. Appl. Phys. Lett. 67 7 (1995) 941
25. Searson P.C., Macaulay J.M., and Ross F.M. J. Appl. Phys. 72 (1992) 253
26. Frey S., Kemell M., Carstensen J., Langa S., and Föll H. Phys. Status Solidi (a) 202 8 (2005) 1369
27. Bao X.Q., Jiao J.W., Wang Y.L., Na K.W., and Choi H. J. Electrochem. Soc. 154 3 (2007) D175
28. Létant S.E., van Buuren A.W., and Terminello L.J. Nano Lett. 4 9 (2004) 1705-1707
29. Searson P.C., and Zhang X.G. J. Electrochem. Soc. 137 8 (1990) 2539
30. H.A. Bethe, MIT radiation Lab. Report 43, 1942, p. 12.
31. Rakich P.T., Dahlem M.S., Tandon S., Ibanescu M., Soljacic M., Petrich G.S., Joannopoulos J.D., Kolodziejsk L.A., and Ippen E.P. Nature Mater. 5 (2006) 93
32. X.Q. Bao, J.W. Jiao, Y.L. Wang, Kyoung Won Na, H. Choi, Electrochem. Commun. (2007), in press, doi:10.1016/j.elecom.2007.02.010.
33. Qi M., Lidorikis E., Rakich P.T., Johnson S.G., Joannopoulos J.D., Ippen E.P., and Smith H.I. Nature 429 (2004) 538
34. Schilling J., White J., Scherer A., Stupian G., Hillebrand R., and Gösele U. Appl. Phys. Lett. 86 1 (2005) 011101-1