Highly controllable electrochemical deep etching process on silicon

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2005, Pages 512-515

  Chen, Yu ^a,b   Wang, Lianwei ^a,b   Sarro, P M ^c  

^a EAST CHINA NORMAL UNIVERSITY   (China)

^b STATE KEY LABORATORY OF TRANSDUCER TECHNOLOGY   (China)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY EFFECTS; CURRENT MODULATION; DESIGN PATTERNS; ELECTROCHEMICAL DEEP ETCHING;

ASPECT RATIO; ELECTROCHEMISTRY; MAGNETIC FIELDS; SILICON; THERMAL EFFECTS;

ETCHING;

EID: 26844454152     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2005.1453979     Document Type: Conference Paper

References (4)

1. H. Ohji, "Macroporous Si based micromachining", Ph.D. thesis, 2002, Delft, The Netherlands, ISBN 90-5166-90.
2. L. Wang, et al "High Aspect Ratio through-Wafer Interconnections for 3D-Microsystems" Proc. 16th IEEE International MEMS conference, January 19-23, 2003, Kyoto, Japan, pp. 634-637.
3. H. Föll et al, Materials Science and Engineering R 39 (2002) 93-141
4. Barillaro et al, "Electrochemical etching in HF solution for silicon micromachining", Sensors and Actuators A: Physical 102 (2002) pp. 195-201