메뉴 건너뛰기




Volumn 127, Issue 2, 2006, Pages 255-260

The continuous spinning current (CSC) stress sensor method for the extraction of two stress components in an offset compensated manner

Author keywords

Continuous spinning current (CSC); Fourier transform; Hall sensor; Spinning current; Stress sensor; Stress sensor method; Switching current

Indexed keywords

AMPLIFIERS (ELECTRONIC); FOURIER TRANSFORMS; HALL EFFECT DEVICES; NONLINEAR SYSTEMS; PIEZOELECTRIC DEVICES; SIGNAL SYSTEMS; SILICON; THERMAL EFFECTS; THERMOELECTRICITY;

EID: 33644914216     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2005.08.036     Document Type: Article
Times cited : (15)

References (21)
  • 1
    • 0001731898 scopus 로고
    • Mechanical sensors
    • S.M. Sze Wiley-Interscience New York
    • B. Kloeck, and N.F. Rooij Mechanical sensors S.M. Sze Semiconductor Sensors 1994 Wiley-Interscience New York 153 204
    • (1994) Semiconductor Sensors , pp. 153-204
    • Kloeck, B.1    Rooij, N.F.2
  • 2
    • 0004247893 scopus 로고
    • Delft University Press Delft, Netherlands
    • S. Middelhoek, and S.A. Audet Silicon Sensors 1994 Delft University Press Delft, Netherlands pp. 95-193
    • (1994) Silicon Sensors
    • Middelhoek, S.1    Audet, S.A.2
  • 4
    • 0002647466 scopus 로고    scopus 로고
    • Silicon piezoresistive stress sensors and their application in electronic packaging
    • J.C. Suhling, and R.C. Jaeger Silicon piezoresistive stress sensors and their application in electronic packaging IEEE Sens. J. 1 1 2001 14 29
    • (2001) IEEE Sens. J. , vol.1 , Issue.1 , pp. 14-29
    • Suhling, J.C.1    Jaeger, R.C.2
  • 5
    • 0001558496 scopus 로고
    • Use of piezoresistive materials in the measurement of displacement, force, and torque
    • W.G. Pfann, and R.N. Thurston Use of piezoresistive materials in the measurement of displacement, force, and torque J. Acoustic Soc. Am. 29 10 1957 1096 1101
    • (1957) J. Acoustic Soc. Am. , vol.29 , Issue.10 , pp. 1096-1101
    • Pfann, W.G.1    Thurston, R.N.2
  • 6
    • 0025698099 scopus 로고
    • Nonlinearity of piezoresistance effect in p- and n-type silicon
    • K. Matsuda, Y. Kanda, K. Yamanura, and K. Suzuki Nonlinearity of piezoresistance effect in p- and n-type silicon Sens. Actuators A 21 1990 45 48
    • (1990) Sens. Actuators A , vol.21 , pp. 45-48
    • Matsuda, K.1    Kanda, Y.2    Yamanura, K.3    Suzuki, K.4
  • 7
    • 0041375271 scopus 로고
    • Thermal sensors
    • S.M. Sze Wiley-Interscience New York
    • A.W. Herwaarden, and G.C.M. Meijer Thermal sensors S.M. Sze Semiconductor Sensors 1994 Wiley-Interscience New York 331 382
    • (1994) Semiconductor Sensors , pp. 331-382
    • Herwaarden, A.W.1    Meijer, G.C.M.2
  • 8
    • 34249846476 scopus 로고
    • Semiconducting stress transducers utilizing the transverse and shear piezoresistance effects
    • W.G. Pfann, and R.N. Thurston Semiconducting stress transducers utilizing the transverse and shear piezoresistance effects J. Appl. Phys. 32 10 1961 2008 2019
    • (1961) J. Appl. Phys. , vol.32 , Issue.10 , pp. 2008-2019
    • Pfann, W.G.1    Thurston, R.N.2
  • 10
    • 3042696929 scopus 로고    scopus 로고
    • Two-dimensional high density piezo-FET stress sensor arrays for in-situ monitoring of wire bonding processes
    • Maastricht, Netherlands, January 25-29
    • M. Doelle, C. Peters, P. Gieschke, P. Ruther, and O. Paul Two-dimensional high density piezo-FET stress sensor arrays for in-situ monitoring of wire bonding processes Tech. Digest, MEMS Maastricht, Netherlands, January 25-29 2004 829 832
    • (2004) Tech. Digest, MEMS , pp. 829-832
    • Doelle, M.1    Peters, C.2    Gieschke, P.3    Ruther, P.4    Paul, O.5
  • 11
    • 26844529380 scopus 로고    scopus 로고
    • xy stresses from a single four-contact sensor using the spinning transverse voltage method
    • Miami, USA, January 30-February 4
    • xy stresses from a single four-contact sensor using the spinning transverse voltage method Tech. Digest, MEMS Miami, USA, January 30-February 4 2005 263 266
    • (2005) Tech. Digest, MEMS , pp. 263-266
    • Bartholomeyczik, J.1    Kibbel, S.2    Ruther, P.3    Paul, O.4
  • 13
    • 0033319396 scopus 로고    scopus 로고
    • Influence of mechanical stress on the offset voltage of Hall devices operated with spinning current method
    • R. Steiner, C. Maier, M. Mayer, S. Bellekom, and H. Baltes Influence of mechanical stress on the offset voltage of Hall devices operated with spinning current method J. Microelectromech. Systems 8 4 1999 466 472
    • (1999) J. Microelectromech. Systems , vol.8 , Issue.4 , pp. 466-472
    • Steiner, R.1    Maier, C.2    Mayer, M.3    Bellekom, S.4    Baltes, H.5
  • 14
    • 84911837213 scopus 로고
    • Communications in the presence of noise
    • C.E. Shannon Communications in the presence of noise Proc. IRE 37 1949 10 21
    • (1949) Proc. IRE , vol.37 , pp. 10-21
    • Shannon, C.E.1
  • 16
    • 33846693940 scopus 로고
    • Piezoresistance effect in germanium and silicon
    • C.S. Smith Piezoresistance effect in germanium and silicon Phys. Rev. 94 1954 42 49
    • (1954) Phys. Rev. , vol.94 , pp. 42-49
    • Smith, C.S.1
  • 17
    • 0001477655 scopus 로고
    • Piezoresistive properties of heavily doped n-type silicon
    • O.N. Tufte, and E.L. Stelzer Piezoresistive properties of heavily doped n-type silicon Phys. Rev. 133 6a 1964 1705 1716
    • (1964) Phys. Rev. , vol.133 , Issue.6 , pp. 1705-1716
    • Tufte, O.N.1    Stelzer, E.L.2
  • 18
    • 0019916789 scopus 로고
    • A graphical representation of the piezoresistance coefficients in silicon
    • Y. Kanda A graphical representation of the piezoresistance coefficients in silicon IEEE Trans. Electron Devices ED-29 1991 64 70
    • (1991) IEEE Trans. Electron Devices , vol.ED-29 , pp. 64-70
    • Kanda, Y.1
  • 19
    • 26844561670 scopus 로고    scopus 로고
    • Geometry dependent sensitivity of planar piezoresistive stress sensors based on the pseudo-hall effect
    • Miami Beach, USA, January 31-February 4
    • M. Doelle, D. Mager, P. Ruther, and O. Paul Geometry dependent sensitivity of planar piezoresistive stress sensors based on the pseudo-hall effect Tech. Digest, IEEE MEMS Conference Miami Beach, USA, January 31-February 4 2005 267 270
    • (2005) Tech. Digest, IEEE MEMS Conference , pp. 267-270
    • Doelle, M.1    Mager, D.2    Ruther, P.3    Paul, O.4
  • 21
    • 0030286542 scopus 로고    scopus 로고
    • Circuit techniques for reducing the effects of op-amp imperfections: Autozeroing, correlated double sampling, and chopper stabilization
    • C.C. Enz, and G.C. Temes Circuit techniques for reducing the effects of op-amp imperfections: autozeroing, correlated double sampling, and chopper stabilization Proc. IEEE 84 11 1996 1584 1614
    • (1996) Proc. IEEE , vol.84 , Issue.11 , pp. 1584-1614
    • Enz, C.C.1    Temes, G.C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.