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Volumn 2, Issue , 2005, Pages 2127-2130

Cartesian lattice spinning current method for the simple extraction of σxx□ - σyy and σxy stresses and the hall voltage from four-contact elements

Author keywords

Fourier transform; Hall effect; Spinning current; Stress sensor

Indexed keywords

BIASING CONDITIONS; SPINNING CURRENT; STRESS SENSORS; VOLTAGE DROPS;

EID: 27544462726     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SENSOR.2005.1497524     Document Type: Conference Paper
Times cited : (7)

References (8)
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    • Multidimensional CMOS in-plane stress sensor
    • Toronto, Canada
    • J. Bartholomeyczik, P. Ruther, and O. Paul, "Multidimensional CMOS in-plane Stress Sensor," Proc. IEEE Sensors, Toronto, Canada, 2003, pp. 242-247.
    • (2003) Proc. IEEE Sensors , pp. 242-247
    • Bartholomeyczik, J.1    Ruther, P.2    Paul, O.3
  • 5
    • 0032048645 scopus 로고    scopus 로고
    • Offset reduction of Hall plates in three different crystal planes
    • S. Bellekom and P. M. Sarro, "Offset reduction of Hall plates in three different crystal planes," Sens. Actuators, vol. A66, no. 1-3, pp. 23-28, 1998.
    • (1998) Sens. Actuators , vol.A66 , Issue.1-3 , pp. 23-28
    • Bellekom, S.1    Sarro, P.M.2
  • 6
    • 0032046188 scopus 로고    scopus 로고
    • Offset reduction in Hall devices by continuous spinning current method
    • R. Steiner, C. Maier, A. Haberli, F. P. Steiner, and H. Baltes, "Offset reduction in Hall devices by continuous spinning current method," Sens. Actuators, vol. A66, no. 1-3, pp. 167-172, 1998.
    • (1998) Sens. Actuators , vol.A66 , Issue.1-3 , pp. 167-172
    • Steiner, R.1    Maier, C.2    Haberli, A.3    Steiner, F.P.4    Baltes, H.5
  • 7
    • 33846693940 scopus 로고
    • Piezoresistance effect in germanium and silicon
    • C. S. Smith, "Piezoresistance Effect in Germanium and Silicon," Phys. Rev., vol. 94, no. 1, pp. 42-49, 1954.
    • (1954) Phys. Rev. , vol.94 , Issue.1 , pp. 42-49
    • Smith, C.S.1
  • 8
    • 0001477655 scopus 로고
    • Piezoresistive properties of heavily doped N-type silicon
    • O. N. Tufte and E. L. Stelzer, "Piezoresistive Properties of Heavily Doped N-Type Silicon," Phys. Rev., vol. 133, no. 6A, pp. 1705-1716, 1964.
    • (1964) Phys. Rev. , vol.133 , Issue.6 A , pp. 1705-1716
    • Tufte, O.N.1    Stelzer, E.L.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.