Normalized mutual integral difference method to extract threshold voltage of MOSFETs

IEEE Electron Device Letters

Volumn 23, Issue 7, 2002, Pages 428-430

  He, Jin ^b,c   Xi, Xuemei ^c   Chan, Mansun ^a,c   Cao, Kanyu ^a,c   Hu, Chenming ^a,c   Li, Yingxue ^d   Zhang, Xing ^a,b   Huang, Ru ^a,b   Wang, Yangyuan ^a,b  

^a IEEE

^b PEKING UNIVERSITY   (China)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d NONE

Author keywords

MOSFET; Normalized mutual integral difference (NMID) method; Threshold voltage

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE MEASUREMENT; NUMERICAL METHODS; THRESHOLD VOLTAGE;

CHANNEL LENGTH VARIATION; NORMALIZED MUTUAL INTEGRAL DIFFERENCE METHOD; PARASITIC RESISTANCE;

MOSFET DEVICES;

EID: 0036646234     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.1015230     Document Type: Article

References (13)

1. Extraction of MOSFET threshold voltage, parasitic resistance, effective channel length, and inversion layer mobility from small-signal channel conductance measurement
2. Comparison of MOSFET threshold voltage extraction methods
3. Static characterization and parameter extraction on MOS transistors
4. Physically-based threshold voltage determination for MOSFETs of all gate lengths
5. Device parameter extraction in the linear region of MOSFETs
6. A new technique to extraction the threshold voltage of MOSFETs
7. New method for extraction of MOSFET parameters
8. Linear cofactor difference method of MOSFET subthreshold characteristics for extracting interface traps induced by gate oxide stress test
9. New method for parameter extraction in deep sub-micrometer MOSFETs
10. A parasitic resistance-independent method for device-model parameter extraction
11. New simple procedure to determine the threshold voltage of MOSFETs