Effects of Al2O3 dielectric cap and nitridation on device performance, scalability, and reliability for advanced high-κ/metal gate pMOSFET applications

IEEE Transactions on Electron Devices

Volumn 54, Issue 10, 2007, Pages 2738-2749

  Chang, Vincent S ^a,b   Ragnarsson, Lars Åke ^a   Yu, Hong Yu ^a   Aoulaiche, Marc ^a,c   Conard, Thierry ^a   Yin, KaiMin ^b   Schram, Tom ^a   Maes, Jan Willem ^d   De Gendt, Stefan ^a,e   Biesemans, Serge ^a  

^a IMEC   (Belgium)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c Katholieke Universiteit Leuven   (Belgium)

^d ASM BELGIUM   (Belgium)

^e UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Aluminum oxide; Atomic layer deposition (ALD); Effective hole mobility; Equivalent oxide thickness (EOT); Hafnium silicate; MOSFETs; Negative bias temperature instability (NBTI); Plasma nitridation; Threshold voltage; Titanium nitride; Work function

Indexed keywords

ALUMINA; ATOMIC LAYER DEPOSITION; ELECTRIC PROPERTIES; HOLE MOBILITY; NITRIDATION; RELIABILITY; SCALABILITY; THRESHOLD VOLTAGE; TITANIUM NITRIDE;

EQUIVALENT OXIDE THICKNESS; HAFNIUM SILICATE; NEGATIVE BIAS TEMPERATURE INSTABILITY;

MOSFET DEVICES;

EID: 35148882476     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.904478     Document Type: Article

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