Behaviour of natural and implanted iron during annealing of multicrystalline silicon wafers

Solid State Phenomena

Volumn 108-109, Issue , 2005, Pages 519-524

  Macdonald, Daniel ^a   Roth, Thomas ^a   Geerligs, L J ^b   Cuevas, Andres ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b TNO   (Netherlands)

Author keywords

Crystalline silicon; Iron; Precipitates; Recombination

Indexed keywords

CARRIER CONCENTRATION; CARRIER LIFETIME; COOLING; IRON; METAL CASTINGS; POLYSILICON; PRECIPITATES; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DEVICE MANUFACTURE;

AFTER HIGH TEMPERATURE; CARRIER LIFETIME MEASUREMENTS; CRYSTALLINE SILICONS; INTERNAL PRECIPITATION; LOWER TEMPERATURES; MULTICRYSTALLINE SILICON WAFERS; PRECIPITATION PROCESS; RECOMBINATION;

SILICON WAFERS;

EID: 35148818844     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.108-109.519     Document Type: Conference Paper

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