Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length

Journal of Applied Physics

Volumn 102, Issue 6, 2007, Pages

  Levinshtein, M E ^a,d   Rumyantsev, S L ^a,c,d   Tauk, R ^a   Boubanga, S ^a   Dyakonova, N ^a   Knap, W ^a   Shchepetov, A ^b   Bollaert, S ^b   Rollens, Y ^b   Shur, M S ^c  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b INSTITUT D ELECTRONIQUE   (France)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; DOPING (ADDITIVES); ELECTRIC POTENTIAL; LEAKAGE CURRENTS; NATURAL FREQUENCIES;

GATE VOLTAGE; GENERATION-RECOMBINATION (GR); GR NOISE; LOW FREQUENCY NOISE;

FIELD EFFECT TRANSISTORS;

EID: 34948834181     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2781087     Document Type: Article

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