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Volumn 92, Issue 8, 2002, Pages 4726-4730

Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures

(12) Rumyantsev, S L a Deng, Y a Borovitskaya, E a Dmitriev, A a Knap, W a Pala, N a Shur, M S a Levinshtein, M E b Khan, M Asif c Simin, G c Yang, J c Hu, X d

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

b IOFFE INSTITUTE (Russian Federation)

c University of South Carolina (United States)

d SENSOR ELECTRONIC TECHNOLOGY INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY E; CRYOGENIC TEMPERATURES; DONOR LEVELS; DOPED CHANNELS; GENERATION-RECOMBINATION NOISE; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; LOW-FREQUENCY NOISE; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE;

ACTIVATION ENERGY; ELECTRON TUNNELING; GALLIUM NITRIDE;

THERMOELECTRICITY;

EID: 18744375435 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1508432 Document Type: Article

Times cited : (28)

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