Design optimization of AlInAs-GaInAs HEMTs for high-frequency applications

IEEE Transactions on Electron Devices

Volumn 51, Issue 4, 2004, Pages 521-528

  Lopez, Javier Mateos ^a   González, Tomás ^a   Pardo, Daniel ^a   Bollaert, Sylvain ^b   Parenty, Thierry ^b   Cappy, Alain ^b  

^a UNIVERSITY OF SALAMANCA   (Spain)

^b UNIV LILLE   (France)

Author keywords

AlInAs GaInAs; Cutoff frequency; High electron mobility transistor (HEMT); High speed devices; Monte Carlo simulation; Parasitic resistances and capacitances; Semiconductor device design and fabrication; Small signal equivalent circuit

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; FREQUENCIES; MONTE CARLO METHODS; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

ALUMINUM INDIUM ARSENIDE; CONTACT RESISTANCES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 11144355224     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.823799     Document Type: Article

References (21)

1. C. Y. Chang and F. Kai, GaAs High-Speed Devices. New York: Wiley, 1994.
2. F. Schwierz, J. J. Liou, and S. Current, "Semiconductor devices for RF applications: Evolution and current status," Microelectron, Reliab., vol. 41, pp. 145-168, 2001.
3. D. Pavlidis, "HBT vs. PHEMT vs. MESFET: What's best and why," in Proc. GaAs MANTECH Conf., Vancouver, Canada, 1999.
4. T of 562 GHz," IEEE Electron Device Lett., vol. 23, pp. 573-575, Nov. 2002.
5. max," IEEE Microwave Guided Wave Lett., vol. 5, pp. 230-232, 1995.
6. S. Tiwari, Compound Semiconductor Device Physics. San Diego, CA: Academic, 1992.
7. C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation, Vienna. Vienna, Austria: Springer-Verlag, 1989.
8. J. Mateos, T. Gonzalez, D. Pardo, V. Hoel, and A. Cappy, "Improved monte carlo algorithm for the simulation of δ-doped AlInAs-GaInAs HEMTs," IEEE Trans. Electron. Devices, vol. 47, pp. 250-253, Feb. 2000.
9. J. Mateos, T. González, D. Pardo, V. Hoel, and A. Cappy, "Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis," Semicond. Sci. Technol., vol. 14, pp. 864-870, 1999.
10. ____, "Monte carlo simulator for the design optimization of low-noise HEMTs," IEEE Trans. Electron Devices, vol. 47, pp. 1950-1956 Oct. 2000.
11. J. Mateos, T. González, D. Pardo, P. Tadyszak, F. Danneville, and A. Cappy, "Numerical and experimental analysis of static characteristics and noise in ungated recessed MESFET structures," Solid State Electron., vol. 39, pp. 1629-1636, 1996.
12. ____, "Noise and transit time in ungated FET structures," IEEE Trans. Electron Devices, vol. 44, pp. 2128-2135, Nov. 1997.
13. ____, "Noise analysis of 0.1 μm gate MESFETs and HEMTs," Solid State Electron., vol. 42, pp. 79-85, 1998.
14. T. González and D. Pardo, "Physical models of ohmic contact for monte carlo device simulation," Solid-State Electron., vol. 39, pp. 555-562, 1996.
15. M. H. Somerville, A. Ernst, and J. A. del Alamo, "A physical model for the kink effect in InAlAs-InGaAs HEMTs," IEEE Trans. Electron Devices, vol. 47, pp. 922-930, June 2000.
16. B. G. Vasallo, J. Mateos, D. Pardo, and T. González, "Monte carlo study of kink effect in short-channel InAlAs-InGaAs HEMT," J. Appl. Phys., vol. 94, pp. 4096-4101, 2003.
17. T. González and D. Pardo, "Monte Carlo determination of the intrinsic small-signal equivalent circuit of MESFETs," IEEE Trans. Electron Devices, vol. 42, pp. 605-611, Apr. 1995.
18. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, "A new method for determining the FET small-signal equivalent circuit," IEEE Trans. Microwave Theory Tech., vol. 32, pp. 1151-1159, 1988.
19. T. Parenty, S. Bollaert, J. Mateos, X. Wallart, and A. Cappy, "Design and realization of sub 100 nm gate length HEMTs," in IEEE Int. Conf. Indium Phosphide and Related Materials, 2001, pp. 626-629.
20. H. Beneking, High Speed Semiconductor Devices. London, U.K.: Chapman & Hall, 1994.
21. M. B. Steer and R. J. Trew, "High frequency limits of millimeter wave transistors," IEEE Electron Device Lett., vol. EDL-7, pp. 640-642, 1986.