Understanding of the excess channel noise in InAlAs/InGaAs/InP high electron mobility transistors in impact ionization regime

Applied Physics Letters

Volumn 90, Issue 10, 2007, Pages

  Wang, Hong ^a   Liu, Yuwei ^a   Zeng, Rong ^a   Tan, Chee Leong ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; CUTOFF FREQUENCY; IMPACT IONIZATION; INDIUM COMPOUNDS;

EXCESS CHANNEL NOISE; FLUCTUATION; HIGH FREQUENCY NOISE; HOLE RECOMBINATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33947131343     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2711376     Document Type: Article

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