Low-frequency gate current noise of InP based HEMTs

Solid-State Electronics

Volumn 43, Issue 9, 1999, Pages 1797-1800

  Simoen, E ^a   Van Meer, H ^a   Valenza, M ^b   Van der Zanden, K ^a   De Raedt, W ^a  

^a IMEC   (Belgium)

^b UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON TRAPS; GATES (TRANSISTOR); HOLE TRAPS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE;

GATE CURRENT NOISE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033185433     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00151-3     Document Type: Article

References (21)

1. Siweris H.J., Schiek B. IEEE Trans. Microwave Theory Tech. MTT-33:1985;233-241.
2. van Meer H., Schreurs D., van Der Zanden K., De Raedt W., Simoen E., Kaufmann L. Proceedings of the SISPAD 98 Conference, 2-4 September, Leuven, Belgium. 1998;157-160.
3. van Meer H., Simoen E., Valenza M., van der Zanden K., De Raedt W. IEEE Trans. Electron Devices. 45:1998;2475-2482.
4. Nguyen L.D., Larsen L.E., Mishra U.K. Proc. IEEE. 80:1992;494-518.
5. Peransin J.M., Vignaud P., Rigaud D., Vandamme L.K.J. IEEE Trans. Electron Devices. 37:1990;2250-2253.
6. Thurairaj M.S., Das M.B., Ballingall J.M., Ho P., Chao P.C., Kao M.-Y. IEEE Electron Device Lett. 12:1991;410-412.
7. Ng G.I., Pavlidis D., Tutt M., Weiss T.M., Marsh P. IEEE Trans. Electron Devices. 39:1992;523-532.
8. Plana R., Llopis O., Verdier J., Escotte L., Parra T., Gayral M., Cappy A., Graffeuil J. IEEE MTT-S Digest. 1996;943-946.
9. Viktorovitch P., Rojo-Romeo P., Leclercq J.L., Letartre X., Tardy J., Oustric M., Gendry M. IEEE Trans. Electron Devices. 43:1996;2085-2099.
10. Py M.A., Buehlmann H.J. J. Appl. Phys. 80:1996;1583-1593.
11. Chertouk M., Chovet A. IEEE Trans. Electron Devices. 43:1996;123-128.
12. Duran H.C., Ren L., Beck M., Py M.A., Ilegems M., Bächtold W. IEEE Trans. Electron Devices. 45:1998;1219-1225.
13. Vandamme L.K.J., Rigaud D., Peransin J.M., Alabedra R., Dumas J.M. IEEE Trans. Electron Devices. 35:1988;1071-1075.
14. Vandamme L.K.J., Rigaud D., Peransin J.M. IEEE Trans. Electron Devices. 39:1992;2377-2382.
15. Bertuccio G., De Geronimo G., Longoni A., Pullia A. IEEE Electron Device Lett. 16:1995;103-105.
16. van Meer H., Valenza M., van der Zanden K., De Raedt W., Simoen E., Schreurs D., Kaufmann L. IEEE Electron Device Lett. 19:1998;370-372.
17. Reuter R., van Waasen S., Tegude F.J. IEEE Electron Device Lett. 16:1995;74-76.
18. Meva'a C., Letartre X., Rojo-Romeo P., Viktorovitch P. Solid-State Electron. 41:1997;857-864.
19. Marsh P., Pavlidis D., Hong K. IEEE Trans. Electron Devices. 45:1998;349-360.
20. van der Zanden K., Baeyens Y., Van Hove M., Schreurs D., De Raedt W., Van Rossum M. IPRM Conf. Proc. 1997;249-252.
21. Farmakis F.V., Brini J., Mathieu N., Kamarinos G., Dimitriadis C.A., Logothetidis S. Semicond. Sci. Technol. 13:1998;1284-1289.