Tunneling mechanism of the 1f noise in GaNAlGaN heterojunction field-effect transistors

Journal of Applied Physics

Volumn 97, Issue 12, 2005, Pages

  Dmitriev, A P ^a   Levinshtein, M E ^a   Rumyantsev, S L ^a,b   Shur, M S ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; DEVICE CHANNEL; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS (HFET); LOW-FREQUENCY NOISES;

ACTIVATION ENERGY; ELECTRON GAS; ELECTRON TUNNELING; FERMI LEVEL; GALLIUM NITRIDE; HETEROJUNCTIONS; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICES; THERMAL EFFECTS;

FIELD EFFECT TRANSISTORS;

EID: 21644448262     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1931033     Document Type: Article

References (23)

1. B. K. Jones, IEEE Trans. Electron Devices 41, 2188 (1994).
2. M. E. Levinshtein and S. L. Rumyantsev, Semicond. Sci. Technol. 9, 1183 (1994).
3. L. K. J. Vandamme, IEEE Trans. Electron Devices 41, 2176 (1994).
4. M. E. Levinshtein, F. Pascal, S. Contreras, W. Knap, S. L. Rumyantsev, R. Gaska, J. W. Jang, and M. S. Shur, Appl. Phys. Lett. 72, 3053 (1998).
5. M. E. Levinshtein, S. L. Rumyantsev, M. S. Shur, R. Gaska, and M. Asif Khan, see Special Issue on Selected Topics on Noise in Semiconductor Devices [IEE Proc.-G: Circuits, Devices Syst. 149, 32 (2002)].
6. M. E. Levinshtein, A. A. Balandin, S. L. Rumyantsev, and M. S. Shur, in Noise and Fluctuations Control in Electronic Devices, edited by, A. Balandin, (American Scientific Publishers, Stevenson Ranch, CA, 2002).
7. J. A. Garrido, F. Calle, E. Munoz, I. Izpura, J. L. Sanches-Rojas, R. Li, and K. L. Wang, Electron. Lett. 34, 2357 (1998).
8. J. A. Garrido, B. E. Foutz, J. A. Smart, J. R. Shealy, M. J. Murphy, W. J. Schaff, and L. F. Eastman, Appl. Phys. Lett. 76, 3442 (2000).
9. S. L. Rumyantsev, N. Pala, M. S. Shur, M. E. Levinshtein, P. A. Ivanov, M. Asif Khan, G. Simin, and J. Yang, Fluct. Noise Lett. 1, L221 (2001).
10. S. L. Rumyantsev, J. Appl. Phys. 92, 4726 (2002).
11. M. E. Levinshtein, S. L. Rumyantsev, Y. Deng, M. S. Shur, R. Gaska, X. Hu, M. Asif Khan, and G. Simin, Proceedings of the 17th International Conference on Noise and Fluctuations, Prague, Czech Republic, 18-22 August 2003, edited by, J. Sikula, (CNRL s.r.o., Brno, Czech Republic, 2003), pp. 353-356
12. S. L. Rumyantsev, J. Appl. Phys. 96, 3845 (2004).
13. A. L. McWhorter, in Semiconductor Surface Physics, edited by, R. H. Kingston, (University of Pennsylvania Press, Philadelphia, PA, 1957), pp. 207-228.
14. S. L. Rumyantsev, Semicond. Sci. Technol. 18, 589 (2003).
15. Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, and SiGe, edited by, M. E. Levinshtein, S. L. Rumyantsev, and, M. S. Shur, (Wiley, New York, 2001).
16. M. S. Shur, GaAs Devices and Circuits (Plenum, New York, 1987).
17. F. N. Hooge, T. G. M. Kleinpenning, and L. K. J. Vandamme, Rep. Prog. Phys. 44, 479 (1981).
18. N. V. Dyakonova and M. E. Levinshtein, Sov. Phys. Semicond. 23, 175 (1989).
19. E. G. Guk, N. V. D'yakonova, M. E. Levinshtein, and S. L. Rumyantsev, Sov. Phys. Semicond. 24, 513 (1990).
20. N. V. Dyakonova, M. E. Levinshtein, and S. L. Rumyantsev, Sov. Phys. Semicond. 25, 1241 (1991).
21. J. F. Muth, J. D. Brown, M. A. L. Johnson, Z. Yu, R. M. Kolbas, J. W. Cook, Jr., and J. F. Schetzina, MRS Internet J. Nitride Semicond. Res. 4S1, G5. 2 (1999).
22. M. E. Levinshtein and S. L. Rumyantsev, Sov. Phys. Semicond. 24, 1125 (1990).
23. M. Shur, Physics of Semiconductors (Prentice Hall, Englewood Cliffs, NJ, 1990) p. 56.