The 1/f noise of InP based 2DEG devices and its dependence on mobility

IEEE Transactions on Electron Devices

Volumn 46, Issue 1, 1999, Pages 194-203

  Berntgen, Jürgen ^a,b   Heime, Klaus ^a   Daumann, Walter ^a,b   Auer, Uwe ^a   Tegude, Franz Josef ^a   Matulionis, Arvydas ^a  

^a UNIVERSITY HOSPITAL RWTH AACHEN   (Germany)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRON GAS; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHONONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SPURIOUS SIGNAL NOISE;

HOOGE PARAMETER;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0032741333     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.737459     Document Type: Article

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