Effects of phase of underlying W film on chemical vapor deposited-W film growth and applications to contact-plug and bit line processes for memory devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 5, 2007, Pages 1574-1580

  Kim, Soo Hyun ^a   Kim, Jeong Tae ^b   Kwak, Nohjung ^b   Kim, Jinwoong ^b   Yoon, Tae Sik ^c   Sohn, Hyunchul ^d  

^a Yeungnam University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

^c Seoul National University   (South Korea)

^d Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONTACT RESISTANCE; DATA STORAGE EQUIPMENT; NUCLEATION; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN; X RAY DIFFRACTION ANALYSIS;

BIT LINE CONTACT; BIT LINE RESISTANCE; PARASITIC CAPACITANCE;

METALLIC FILMS;

EID: 34648829845     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2770739     Document Type: Article

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